3rd and final course in the Semiconductor Devices Specialization
Instructor: Wounjhang Park, Ph.D., Professor
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, modes of operation, switching and current amplifying behaviors.
Prior knowledge needed: ECEA 5630 Semiconductor Physics, ECEA 5631 Diode Junction and Metal Semiconductor Contact, Understanding of active semiconductor devices, basic electronics, Circuits & Systems (e.g. Frequency Response Analysis), Basic understanding of carrier concentration and quantum theory and Calculus and Differential equations.
Learning Outcomes
Syllabus
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Grading
Assignment |
Percentage of Grade |
Homework #1 |
18% |
Homework #2 |
18% |
Peer Review: BJT with Recombination in Base |
6% |
Homework #3 |
18% |
Final Exam |
40% |
Letter Grade Rubric
Letter Grade |
Minimum Percentage |
A |
95% |
A- |
90% |
B+ |
85% |
B |
80% |
B- |
75% |
C+ |
70% |
C |
65% |
C- |
60% |
D+ |
55% |
D |
50% |
F |
0% |