Colorado Nanofabrication Lab

Information about the Colorado Nanofabrication Lab facility.

Contact: Tzu-Min Ou

Instruments

Chemical Hoods for (metal and dielectric thin films) wet etching and photoresist development.

The DWL 66FS laser lithography system is an economical, high resolution pattern generator for low volume mask making and direct writing. The capabilities and flexibility of this system make it the ultimate lithographic research tool in Life Science, Advanced Packaging, MEMS, Micro-Optics, Semiconductor and all other applications that require microstructures. 

The DWL 66FS includes all the features that are needed for successful creation and analysis of your microstructures. It can be used for mask making or direct exposure on basically any flat material coated with photoresist. 

Easy to use and compact in size the SUSS MicroTec MJB3 represents the perfect system for laboratories and small volume production. As an inexpensive photolithography solution the MJB3 has set industry standards specifically for processing of small substrates and pieces up to 100mm. Equipped with a reliable, high precision alignment and high resolution printing capability in the submicron range the MJB3 demonstrates a performance unsurpassed by any comparable machine.

For anisotropic & high aspect ratio deep etch.

5" quatz tube furnaces that can go up to 1200 degrees Celcius with pure gases (oxygen, hydrogen, argon, forming gas, nitrogen) for thermal anneal, graphene growth, Si thermal oxidation, and dopant diffusion.

Rapid thermal anneal (with argon and nitrogen) is also available.

Various thin-film deposition tools, including PVD (e-beam & thermal evaporators, DC & RF magnetron (reactive) sputterers) and CVD (APCVD of graphene, Si oxidation, PECVD of SiO2 and SiNx).

Available sputter targets:
Indium Tin Oxide(ITO), Indium Zinc Oxide (IZO), Tungsten (W), Tantalum (Ta), Copper (Cu), Aluminum (Al), Chromium (Cr), ZincOxide (ZnO), Silicon (Si), SiliconCarbide(SiC), Titanium (Ti), Molybdenum (Mo), Zirconium (Zr), Tantalumcarbide (TaC), AlN, Al2O3, Cu2O, TaN, Ta2O5, WO3.